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| AO4413A P-Channel Enhancement Mode Field Effect Transistor General Description The AO4413A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. Standard product AO4413A is Pb-free (meets ROHS & Sony 259 specifications). AO4413AL is a Green Product ordering option. AO4413A and AO4413AL are electrically identical. Features VDS (V) = -30V ID = -15A (V GS = -10V) RDS(ON) < 7m (VGS = -20V) RDS(ON) < 8.5m (VGS = -10V) SOIC-8 Top View D S S S G D D D D G S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -30 25 -15 -12.8 -80 3 2.1 -55 to 150 Units V V A TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG W C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t 10s Steady-State Steady-State RJA RJL Typ 32 62 18 Max 40 75 24 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO4413A Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=25V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-20V, I D=-15A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=-10V, I D=-15A VGS=-6V, ID=-10A gFS VSD IS Forward Transconductance VDS=-5V, ID=-15A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current 6.6 8.2 48 -0.72 -1 5 4245 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 983 689 12 69 VGS=-10V, VDS=-15V, I D=-15A 15.2 18.8 16.5 VGS=-10V, VDS=-15V, RL=1.0, RGEN=3 IF=-15A, dI/dt=100A/s IF=-15A, dI/dt=100A/s 23.5 116 82 59 55 77 18 90 5500 -1.5 -60 5.5 7 8.7 8.5 -2.2 Min -30 -1 -5 100 -3.5 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. -15 C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. -12.8 D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. F. Rev 0: July 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4413A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -4.5V 25 20 -ID (A) 15 10 VGS=-3.5V 5 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 12 Normalized On-Resistance 1.6 VGS=-20V ID=-15A 1.4 VGS=-10V ID=-15A VGS=-6V ID=-10A 5 0 2 2.5 3 3.5 4 4.5 -VGS(Volts) Figure 2: Transfer Characteristics 25C -5V -10V 25 -4V -ID(A) 20 15 10 30 VDS=-5V 125C 10 RDS(ON) (m) VGS=-6V 8 VGS=-10V 6 VGS=-20V 4 0 5 10 15 20 25 30 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 25 RDS(ON) (m) 20 15 125C 10 5 0 4 8 12 16 20 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C ID=-15A -12.8 -15 1.0E+01 1.0E+00 1.0E-01 125C -IS (A) 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 25C Alpha & Omega Semiconductor, Ltd. AO4413A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 VDS=-15V ID=-15A Capacitance (pF) 6000 5000 4000 3000 2000 1000 Crss 0 0 10 30 40 50 60 -Qg (nC) Figure 7: Gate-Charge Characteristics 20 70 0 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Coss Ciss 8 -VGS (Volts) 6 4 2 0 100.0 RDS(ON) limited 10.0 -ID (Amps) 100s 1ms Power (W) 10ms 0.1s 1.0 TJ(Max)=150C TA=25C 0.1 0.1 1 10 100 -V (Volts) Figure 9: Maximum DS Forward Biased Safe Operating Area (Note E) 10 ZJA Normalized Transient Thermal Resistance 1s 10s DC 10s 40 TJ(Max)=150C TA=25C 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -15 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse -12.8 1 0.1 PD Single Pulse Ton T 100 1000 0.01 0.00001 0.0001 0.001 0.01 1 10 Pulse 0.1 Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
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